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| jmnic product specification silicon npn power transistors 2N6492 description ? with to-3 package ? low collector saturation voltage ? high dc current gain ? darlington applications ? general-purpose power amplifier and low frequency swithing applications pinning absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 55 v v ceo collector-emitter voltage open base 45 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a p d total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.75 ?? /w pin description 1 base 2 emitter 3 collector fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2N6492 characteristics tm=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0 45 v v cesat collector-emitter saturation voltage i c =10a ;i b =100ma 3.0 v v besat base-emitter saturation voltage i c =10a ;i b =100ma 4.0 v v be base-emitter on voltage i c =3a ; v ce =4v 2.8 v i ceo collector cut-off current v ce =40v; i b =0 1.0 ma i cex collector cut-off current v ce =55v; v be(off) =-1.5v 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe-1 dc current gain i c =3a ; v ce =4v 500 h fe-2 dc current gain i c =15a ; v ce =4v 100 jmnic product specification 3 silicon npn power transistors 2N6492 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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